onsemi Single FETs, MOSFETs FQA9P25

Description
P-Channel 250V 10.5A (Tc) 150W (Tc) Through Hole TO-3P
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Description
P-Channel 250V 10.5A (Tc) 150W (Tc) Through Hole TO-3P
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - FQA9P25FS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA9P25FS-ND
Single FETs, MOSFETs FQA9P25FS-ND
P-Channel 250V 10.5A (Tc) 150W (Tc) Through Hole TO-3P

P-Channel 250V 10.5A (Tc) 150W (Tc) Through Hole TO-3P

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA9P25 - 1039579-FQA9P25 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA9P25
1039579-FQA9P25
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA9P25 1039579-FQA9P25
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039579-FQA9P25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 10.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1180pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 620 mOhm @ 5.25A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Sufficient Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039579-FQA9P25
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 10.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1180pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 620 mOhm @ 5.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
Quantity per package: 450

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Sheung Wan, Hong Kong
MOSFET
FQA9P25
MOSFET FQA9P25
MOSFET 250V P-Channel QFET

MOSFET 250V P-Channel QFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA9P25 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA9P25
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA9P25
MOSFET P-CH 250V 10.5A TO3P

MOSFET P-CH 250V 10.5A TO3P

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQA9P25FS-ND 1039579-FQA9P25 FQA9P25 FQA9P25
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA9P25 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3PN 1180 pF @ 25 V
V(BR)DSS 250 volts
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