Manufacturer: ON Semiconductor
Win Source Part Number: 1175177-FQA9N90C
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: FQA9N90C
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-3P-3, SC-65-3
Power Dissipation (Maximum): 280W
Alternative Parts (Cross-Reference): 2SK1358; 2SK2611(STA1,F,T); TSM9N90CN C0; 2SK2611(PAIRMDN,F); 2SK2847; FQA11N90C_NL; 2SK1462;
Introduction Date: March 05, 2003
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 900V
Id - Continuous Drain Current: 9A
Rds On (Maximum) at Id, Vgs: 1.4Ohm at 4.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 58nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 2730pF at 25V
N-Channel 900V 9A (Tc) 280W (Tc) Through Hole TO-3P
MOSFET N-CH 900V 9A TO-3P Product overview: FQA9N90C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA9N90C can be used for catalog matching and distributor lookup.
MOSFET N-CH 900V 9A TO3P
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1175177-FQA9N90C | FQA9N90C-ND | FQA9N90C | 278-FQA9N90C | FQA9N90C |
| Product Name | FETs - Single - FQA9N90C | Single FETs, MOSFETs | Single FETs, MOSFETs | 900V 9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 900 volts | 900 volts | |||
| PD | 280000 milliwatts | 280000 milliwatts | 280000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
