onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA9N90C_F109 FQA9N90C_F109

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 122767-FQA9N90C_F109 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280W (Tc) Family Name: FQA9N90C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 2730pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 4.5A, 10V Alternative Parts (Cross-Reference): TSM9N90CN C0; STW11NK90Z; STW9NK90Z; STW6N90K5; Introduction Date: March 05, 2003 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 122767-FQA9N90C_F109 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280W (Tc) Family Name: FQA9N90C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 2730pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 4.5A, 10V Alternative Parts (Cross-Reference): TSM9N90CN C0; STW11NK90Z; STW9NK90Z; STW6N90K5; Introduction Date: March 05, 2003 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA9N90C_F109 - 122767-FQA9N90C_F109 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA9N90C_F109
122767-FQA9N90C_F109
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA9N90C_F109 122767-FQA9N90C_F109
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 122767-FQA9N90C_F109 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280W (Tc) Family Name: FQA9N90C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 2730pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 4.5A, 10V Alternative Parts (Cross-Reference): TSM9N90CN C0; STW11NK90Z; STW9NK90Z; STW6N90K5; Introduction Date: March 05, 2003 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 122767-FQA9N90C_F109
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280W (Tc)
Family Name: FQA9N90C
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 2730pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 4.5A, 10V
Alternative Parts (Cross-Reference): TSM9N90CN C0; STW11NK90Z; STW9NK90Z; STW6N90K5;
Introduction Date: March 05, 2003
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
900V 9A MOSFET Transistor
285-FQA9N90C_F109
900V 9A MOSFET Transistor 285-FQA9N90C_F109
MOSFET N-CH 900V 9A TO-3P / Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3P Tube Product overview: FQA9N90C_F109 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 9A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQA9N90C_F109 can be used for catalog matching and distributor lookup.

MOSFET N-CH 900V 9A TO-3P / Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3P Tube Product overview: FQA9N90C_F109 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 9A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQA9N90C_F109 can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 122767-FQA9N90C_F109 285-FQA9N90C_F109
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA9N90C_F109 900V 9A MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 900 volts
PD 280000 milliwatts 280000 milliwatts
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