onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA8N100C FQA8N100C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039570-FQA8N100C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 225W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 3220pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.45 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient Quantity per package: 450
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA8N100C - 1039570-FQA8N100C - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQA8N100C - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQA8N100CFS-ND - DigiKey
    DigiKey
  • Transistor - 80741298 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA8N100C - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Ch, 1Kv, 8A, To-3Pn-3; Channel Type Onsemi - 31Y1509 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039570-FQA8N100C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 225W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 3220pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.45 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA8N100C - 1039570-FQA8N100C - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA8N100C
1039570-FQA8N100C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA8N100C 1039570-FQA8N100C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039570-FQA8N100C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 225W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 3220pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.45 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039570-FQA8N100C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 225W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 3220pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.45 Ohm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
Quantity per package: 450

Buy Now Datasheet
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6714972
MOSFETs 6714972
MOSFET N-Channel 1KV 8A TO-3P(N)

MOSFET N-Channel 1KV 8A TO-3P(N)

Supplier's Site
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6714972P
MOSFETs 6714972P
MOSFET N-Channel 1KV 8A TO-3P(N)

MOSFET N-Channel 1KV 8A TO-3P(N)

Supplier's Site
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1461970
MOSFETs 1461970
MOSFET N-Channel 1KV 8A TO-3P(N)

MOSFET N-Channel 1KV 8A TO-3P(N)

Supplier's Site
Single FETs, MOSFETs - FQA8N100C - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQA8N100C
Single FETs, MOSFETs FQA8N100C
MOSFET N-CH 1000V 8A TO3PN

MOSFET N-CH 1000V 8A TO3PN

Supplier's Site Datasheet
Single FETs, MOSFETs - FQA8N100CFS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA8N100CFS-ND
Single FETs, MOSFETs FQA8N100CFS-ND
N-Channel 1000V 8A (Tc) 225W (Tc) Through Hole TO-3PN

N-Channel 1000V 8A (Tc) 225W (Tc) Through Hole TO-3PN

Buy Now Datasheet
Transistor - 80741298 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
80741298
Transistor 80741298
MOSFET, N CH, 1KV, 8A, TO-3PN-3, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:1KV, CONTINUOUS DRAIN CURRENT ID:8A, ON RESISTANCE RDS(ON):1.2OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N CH, 1KV, 8A, TO-3PN-3, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:1KV, CONTINUOUS DRAIN CURRENT ID:8A, ON RESISTANCE RDS(ON):1.2OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA8N100C - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA8N100C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA8N100C
MOSFET N-CH 1000V 8A TO3PN

MOSFET N-CH 1000V 8A TO3PN

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQA8N100C
MOSFET FQA8N100C
MOSFET 1000V N-Channe MOSFET

MOSFET 1000V N-Channe MOSFET

Buy Now Datasheet
Mosfet, N Ch, 1Kv, 8A, To-3Pn-3; Channel Type Onsemi - 31Y1509 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 1Kv, 8A, To-3Pn-3; Channel Type Onsemi
31Y1509
Mosfet, N Ch, 1Kv, 8A, To-3Pn-3; Channel Type Onsemi 31Y1509
MOSFET, N CH, 1KV, 8A, TO-3PN-3; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Product Range:- RoHS Compliant: Yes

MOSFET, N CH, 1KV, 8A, TO-3PN-3; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Product Range:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039570-FQA8N100C 6714972 6714972P FQA8N100C FQA8N100CFS-ND 80741298 FQA8N100C FQA8N100C 31Y1509
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA8N100C MOSFETs MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Ch, 1Kv, 8A, To-3Pn-3; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 1000 volts 1000 volts 1000 volts 1000 volts
PD 225000 milliwatts 225000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-3; SOT3; TO-3PN TO-3PN TO-3PN TO-3; TO-3P-3, SC-65-3 TO-3; TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3
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