onsemi Electronic Surplus - FQA7N60 FQA7N60

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1175168-FQA7N60 Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-3P-3, SC-65-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Part Status: Obsolete(EOL) Family Name: FQA7N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1430pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 152W (Tc) Rds On (Maximum) @ Id, Vgs: 1 Ohm @ 3.9A, 10V Alternative Parts (Cross-Reference): 2SK1968; 2SK1968-E; APT11F80B; Introduction Date: May 15, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
  • Electronic Surplus - FQA7N60 - 1175168-FQA7N60 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQA7N60-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA7N60 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1175168-FQA7N60 Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-3P-3, SC-65-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Part Status: Obsolete(EOL) Family Name: FQA7N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1430pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 152W (Tc) Rds On (Maximum) @ Id, Vgs: 1 Ohm @ 3.9A, 10V Alternative Parts (Cross-Reference): 2SK1968; 2SK1968-E; APT11F80B; Introduction Date: May 15, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
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Suppliers

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Product
Description
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Electronic Surplus - FQA7N60 - 1175168-FQA7N60 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - FQA7N60
1175168-FQA7N60
Electronic Surplus - FQA7N60 1175168-FQA7N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1175168-FQA7N60 Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-3P-3, SC-65-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Part Status: Obsolete(EOL) Family Name: FQA7N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1430pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 152W (Tc) Rds On (Maximum) @ Id, Vgs: 1 Ohm @ 3.9A, 10V Alternative Parts (Cross-Reference): 2SK1968; 2SK1968-E; APT11F80B; Introduction Date: May 15, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1175168-FQA7N60
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-3P-3, SC-65-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQA7N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-3P
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1430pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 152W (Tc)
Rds On (Maximum) @ Id, Vgs: 1 Ohm @ 3.9A, 10V
Alternative Parts (Cross-Reference): 2SK1968; 2SK1968-E; APT11F80B;
Introduction Date: May 15, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - FQA7N60-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA7N60-ND
Single FETs, MOSFETs FQA7N60-ND
N-Channel 600V 7.7A (Tc) 152W (Tc) Through Hole TO-3P

N-Channel 600V 7.7A (Tc) 152W (Tc) Through Hole TO-3P

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA7N60 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA7N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA7N60
MOSFET N-CH 600V 7.7A TO3P

MOSFET N-CH 600V 7.7A TO3P

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1175168-FQA7N60 FQA7N60-ND FQA7N60
Product Name Electronic Surplus - FQA7N60 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 152000 milliwatts
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