POWER FIELD-EFFECT TRANSISTOR, 7
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040329-FQA70N15
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 70A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 175nC @ 10V
Max Input Capacitance: 5400pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 28 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Quantity per package: 450
MOSFETs 150V N-Channel QFET Product overview: FQA70N15 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 150V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQA70N15 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 150V, 70A, 175DEG C, 330W; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:70A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:330W; Product Range:- RoHS Compliant: Yes
MOSFET N-CH 150V 70A TO3PN
MOSFET, N-CH, 150V, 70A, 175DEG C, 330W, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:150V, CONTINUOUS DRAIN CURRENT ID:70A, ON RESISTANCE RDS(ON):0.023OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:4V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQA70N15 | 040329-FQA70N15 | 2088-FQA70N15 | 31Y1508 | FQA70N15 | FQA70N15 | 49272268 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA70N15 | N-Channel 150V MOSFET Transistor | Mosfet, N-Ch, 150V, 70A, 175Deg C, 330W; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 150 volts | 150 volts | |||||
| IDSS | 70000 milliamps | 70000 milliamps | |||||
| PD | 330000 milliwatts | 330000 milliwatts | 330 milliwatts | 330000 milliwatts |
