MOSFET N-CH 100V 70A TO3PN
POWER FIELD-EFFECT TRANSISTOR, 7
N-Channel 100V 70A (Tc) 214W (Tc) Through Hole TO-3PN
MOSFET N-Channel 100V 70A TO-3P(N)
MOSFET N-Channel 100V 70A TO-3P(N)
MOSFET N-Channel 100V 70A TO-3P(N)
MOSFETs 100V N-Channel QFET Product overview: FQA70N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQA70N10 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040328-FQA70N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 214W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 70A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 3300pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 23 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 450
MOSFET, N, TO-3P, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:100V, CONTINUOUS DRAIN CURRENT ID:70A, ON RESISTANCE RDS(ON):0.023OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:4VROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 70A TO3PN
MOSFET, N, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:70A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:214W; MSL:-RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQA70N10 | FQA70N10-ND | 6714963 | 6714963P | 2088-FQA70N10 | 040328-FQA70N10 | 38469709 | FQA70N10 | FQA70N10 | 97K0152 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | N-Channel 100V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA70N10 | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N, To-3P; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||||
| IDSS | 70000 milliamps | 70000 milliamps | ||||||||
| PD | 214000 milliwatts | 214 milliwatts | 214000 milliwatts | 214000 milliwatts |
