N-Channel 900V 6.4A (Tc) 198W (Tc) Through Hole TO-3P
Manufacturer: ON Semiconductor
Win Source Part Number: 1175167-FQA6N90
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-3P-3, SC-65-3
Power Dissipation (Maximum): 198W
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 900V
Id - Continuous Drain Current: 6.4A
Rds On (Maximum) at Id, Vgs: 1.9Ohm at 3.2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 52nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1880pF at 25V
MOSFET N-CH 900V 6.4A TO3P
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQA6N90-ND | 1175167-FQA6N90 | FQA6N90 |
| Product Name | Single FETs, MOSFETs | FETs - Single - FQA6N90 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3 | TO-3P-3, SC-65-3 |
| V(BR)DSS | 900 volts |
