N-Channel 800V 6.3A (Tc) 185W (Tc) Through Hole TO-3P
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 136249-FQA6N80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 185W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6.3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.95 Ohm @ 3.15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
MOSFET N-CH 800V 6.3A TO3P
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQA6N80-ND | 136249-FQA6N80 | FQA6N80 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA6N80 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3P | TO-3P-3, SC-65-3 |
| V(BR)DSS | 800 volts |
