onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA6N70 FQA6N70

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067374-FQA6N70
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 152W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 700V
Continuous Drain Current at 25°C: 6.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 3.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

MOSFET N-CH 700V 6.4A TO-3P Product overview: FQA6N70 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 6.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 6.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA6N70 can be used for catalog matching and distributor lookup.

N-Channel 700V 6.4A (Tc) 152W (Tc) Through Hole TO-3P