onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA65N20 FQA65N20

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040327-FQA65N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Family Name: FQA65N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 65A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 7900pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 32 mOhm @ 32.5A, 10V
Alternative Parts (Cross-Reference): STW40NF20; STW75NF20;
Introduction Date: January 05, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 450

POWER FIELD-EFFECT TRANSISTOR, 6

N-Channel 200V 65A (Tc) 310W (Tc) Through Hole TO-3PN

N-Channel MOSFET, 200V, 65A, 32mR, TO-3P Product overview: FQA65N20 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 65A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 65A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA65N20 can be used for catalog matching and distributor lookup.