Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204268-FQA62N25C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 298W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 62A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 6280pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 35 mOhm @ 31A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 450
N-Channel 250V 62A (Tc) 298W (Tc) Through Hole TO-3PN
MOSFET N-CH 250V 62A TO3PN
POWER FIELD-EFFECT TRANSISTOR, 6
N CHANNEL MOSFET, 250V, 62A, TO-3PN; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:62A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 250V 62A TO3PN
MOSFET 250V N-Channel Adv Q-FET C-Series
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 204268-FQA62N25C | FQA62N25CFS-ND | FQA62N25C | 60J0786 | FQA62N25C | FQA62N25C |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA62N25C | Single FETs, MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 250V, 62A, To-3Pn; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 250 volts | 250 volts | ||||
| PD | 298000 milliwatts | 298000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
