onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA55N25 FQA55N25

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039564-FQA55N25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Family Name: FQA55N25 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 55A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 180nC @ 10V Max Input Capacitance: 6250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 40 mOhm @ 27.5A, 10V Alternative Parts (Cross-Reference): STW52NK25Z; FQA55N25_NL; Introduction Date: January 05, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Quantity per package: 450
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA55N25 - 1039564-FQA55N25 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQA55N25-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA55N25 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N, To-3P; Channel Type Onsemi - 23M6299 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039564-FQA55N25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Family Name: FQA55N25 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 55A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 180nC @ 10V Max Input Capacitance: 6250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 40 mOhm @ 27.5A, 10V Alternative Parts (Cross-Reference): STW52NK25Z; FQA55N25_NL; Introduction Date: January 05, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA55N25 - 1039564-FQA55N25 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA55N25
1039564-FQA55N25
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA55N25 1039564-FQA55N25
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039564-FQA55N25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Family Name: FQA55N25 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 55A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 180nC @ 10V Max Input Capacitance: 6250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 40 mOhm @ 27.5A, 10V Alternative Parts (Cross-Reference): STW52NK25Z; FQA55N25_NL; Introduction Date: January 05, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039564-FQA55N25
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Family Name: FQA55N25
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 6250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 40 mOhm @ 27.5A, 10V
Alternative Parts (Cross-Reference): STW52NK25Z; FQA55N25_NL;
Introduction Date: January 05, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FQA55N25-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA55N25-ND
Single FETs, MOSFETs FQA55N25-ND
N-Channel 250V 55A (Tc) 310W (Tc) Through Hole TO-3PN

N-Channel 250V 55A (Tc) 310W (Tc) Through Hole TO-3PN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA55N25 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA55N25
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA55N25
MOSFET N-CH 250V 55A TO3PN

MOSFET N-CH 250V 55A TO3PN

Supplier's Site
Mosfet, N, To-3P; Channel Type Onsemi - 23M6299 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-3P; Channel Type Onsemi
23M6299
Mosfet, N, To-3P; Channel Type Onsemi 23M6299
MOSFET, N, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:55A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:310W; MSL:-RoHS Compliant: Yes

MOSFET, N, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:55A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:310W; MSL:-RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQA55N25
MOSFET FQA55N25
MOSFET 250V N-Channel QFET

MOSFET 250V N-Channel QFET

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039564-FQA55N25 FQA55N25-ND FQA55N25 23M6299 FQA55N25
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA55N25 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N, To-3P; Channel Type Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 250 volts
PD 310000 milliwatts 310000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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