onsemi Single FETs, MOSFETs FQA55N25

N-Channel 250V 55A (Tc) 310W (Tc) Through Hole TO-3PN

N-Channel MOSFET, 250V, 55A, 40mR, TO-3P Product overview: FQA55N25 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 250V, 55A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 55A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA55N25 can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039564-FQA55N25
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Family Name: FQA55N25
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 6250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 40 mOhm @ 27.5A, 10V
Alternative Parts (Cross-Reference): STW52NK25Z; FQA55N25_NL;
Introduction Date: January 05, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Quantity per package: 450