onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA55N10 FQA55N10

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040326-FQA55N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 61A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 2730pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 26 mOhm @ 30.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

MOSFET N-CH 100V 61A TO-3P Product overview: FQA55N10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 61A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 61A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA55N10 can be used for catalog matching and distributor lookup.

N-Channel 100V 61A (Tc) 190W (Tc) Through Hole TO-3P