onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA36P15 FQA36P15

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 141272-FQA36P15 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 294W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 3320pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 90 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 450
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA36P15 - 141272-FQA36P15 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQA36P15 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQA36P15-ND - DigiKey
    DigiKey
  • P Channel Mosfet, -150V, 36A, To-3P; Channel Type Onsemi - 45J3232 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor, P Channel, -36 A, -150 V, 90 Mohm, -10 V, -4 V Rohs Compliant Onsemi - 61M6400 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA36P15 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 141272-FQA36P15 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 294W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 3320pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 90 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA36P15 - 141272-FQA36P15 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA36P15
141272-FQA36P15
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA36P15 141272-FQA36P15
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 141272-FQA36P15 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 294W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 3320pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 90 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 141272-FQA36P15
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 294W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 105nC @ 10V
Max Input Capacitance: 3320pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 90 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FQA36P15 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQA36P15
Single FETs, MOSFETs FQA36P15
MOSFET P-CH 150V 36A TO3PN

MOSFET P-CH 150V 36A TO3PN

Supplier's Site Datasheet
Single FETs, MOSFETs - FQA36P15-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA36P15-ND
Single FETs, MOSFETs FQA36P15-ND
P-Channel 150V 36A (Tc) 294W (Tc) Through Hole TO-3PN

P-Channel 150V 36A (Tc) 294W (Tc) Through Hole TO-3PN

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQA36P15
MOSFET FQA36P15
MOSFET 150V P-Channel QFET

MOSFET 150V P-Channel QFET

Buy Now Datasheet
P Channel Mosfet, -150V, 36A, To-3P; Channel Type Onsemi - 45J3232 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -150V, 36A, To-3P; Channel Type Onsemi
45J3232
P Channel Mosfet, -150V, 36A, To-3P; Channel Type Onsemi 45J3232
P CHANNEL MOSFET, -150V, 36A, TO-3P; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

P CHANNEL MOSFET, -150V, 36A, TO-3P; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, P Channel, -36 A, -150 V, 90 Mohm, -10 V, -4 V Rohs Compliant Onsemi - 61M6400 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -36 A, -150 V, 90 Mohm, -10 V, -4 V Rohs Compliant Onsemi
61M6400
Mosfet Transistor, P Channel, -36 A, -150 V, 90 Mohm, -10 V, -4 V Rohs Compliant Onsemi 61M6400
MOSFET Transistor, P Channel, -36 A, -150 V, 90 mohm, -10 V, -4 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, -36 A, -150 V, 90 mohm, -10 V, -4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA36P15 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA36P15
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA36P15
MOSFET P-CH 150V 36A TO3PN

MOSFET P-CH 150V 36A TO3PN

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 141272-FQA36P15 FQA36P15 FQA36P15-ND FQA36P15 45J3232 61M6400 FQA36P15
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA36P15 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET P Channel Mosfet, -150V, 36A, To-3P; Channel Type Onsemi Mosfet Transistor, P Channel, -36 A, -150 V, 90 Mohm, -10 V, -4 V Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 150 volts 150 volts
PD 294000 milliwatts 294000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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