Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001229-FQA34N20L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 210W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 34A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 72nC @ 5V
Max Input Capacitance: 3900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
N-Channel 200V 34A (Tc) 210W (Tc) Through Hole TO-3P
MOSFET N-CH 200V 34A TO3P
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 001229-FQA34N20L | FQA34N20L-ND | FQA34N20L |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA34N20L | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 200 volts | ||
| PD | 210000 milliwatts |
