onsemi FETs - Single - FQA34N20 FQA34N20

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175164-FQA34N20 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P-3, SC-65-3 Power Dissipation (Maximum): 210W Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 450 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 34A Rds On (Maximum) at Id, Vgs: 75mOhm at 17A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 78nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 3100pF at 25V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175164-FQA34N20 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P-3, SC-65-3 Power Dissipation (Maximum): 210W Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 450 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 34A Rds On (Maximum) at Id, Vgs: 75mOhm at 17A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 78nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 3100pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FQA34N20 - 1175164-FQA34N20 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQA34N20
1175164-FQA34N20
FETs - Single - FQA34N20 1175164-FQA34N20
Manufacturer: ON Semiconductor Win Source Part Number: 1175164-FQA34N20 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P-3, SC-65-3 Power Dissipation (Maximum): 210W Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Manufacturer Pack Quantity: 450 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 34A Rds On (Maximum) at Id, Vgs: 75mOhm at 17A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 78nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 3100pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175164-FQA34N20
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-3P-3, SC-65-3
Power Dissipation (Maximum): 210W
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 34A
Rds On (Maximum) at Id, Vgs: 75mOhm at 17A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 78nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 3100pF at 25V

Buy Now
Singapore, Singapore
200V 34A MOSFET Transistor
278-FQA34N20
200V 34A MOSFET Transistor 278-FQA34N20
MOSFET N-CH 200V 34A TO-3P Product overview: FQA34N20 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 34A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 34A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA34N20 can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 34A TO-3P Product overview: FQA34N20 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 34A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 34A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA34N20 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQA34N20-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA34N20-ND
Single FETs, MOSFETs FQA34N20-ND
N-Channel 200V 34A (Tc) 210W (Tc) Through Hole TO-3P

N-Channel 200V 34A (Tc) 210W (Tc) Through Hole TO-3P

Buy Now Datasheet
MOSFET N-CH 200V 34A TO-3P - 598-FQA34N20 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 34A TO-3P
598-FQA34N20
MOSFET N-CH 200V 34A TO-3P 598-FQA34N20
MOSFET N-CH 200V 34A TO-3P

MOSFET N-CH 200V 34A TO-3P

Supplier's Site
Single FETs, MOSFETs - FQA34N20 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQA34N20
Single FETs, MOSFETs FQA34N20
MOSFET N-CH 200V 34A TO3P

MOSFET N-CH 200V 34A TO3P

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA34N20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA34N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA34N20
MOSFET N-CH 200V 34A TO3P

MOSFET N-CH 200V 34A TO3P

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Utmel Electronic Limited ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1175164-FQA34N20 278-FQA34N20 FQA34N20-ND 598-FQA34N20 FQA34N20 FQA34N20
Product Name FETs - Single - FQA34N20 200V 34A MOSFET Transistor Single FETs, MOSFETs MOSFET N-CH 200V 34A TO-3P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts
PD 210000 milliwatts 210000 milliwatts 210000 milliwatts 210000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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