onsemi Single FETs, MOSFETs FQA33N10

Description
N-Channel 100V 36A (Tc) 163W (Tc) Through Hole TO-3P
Request a Quote Datasheet
Description
N-Channel 100V 36A (Tc) 163W (Tc) Through Hole TO-3P
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQA33N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA33N10-ND
Single FETs, MOSFETs FQA33N10-ND
N-Channel 100V 36A (Tc) 163W (Tc) Through Hole TO-3P

N-Channel 100V 36A (Tc) 163W (Tc) Through Hole TO-3P

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA33N10 - 001228-FQA33N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA33N10
001228-FQA33N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA33N10 001228-FQA33N10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001228-FQA33N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 163W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 1500pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 52 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001228-FQA33N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 163W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 1500pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 52 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFET N-CH 100V 36A TO-3P - 598-FQA33N10 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 36A TO-3P
598-FQA33N10
MOSFET N-CH 100V 36A TO-3P 598-FQA33N10
MOSFET N-CH 100V 36A TO-3P

MOSFET N-CH 100V 36A TO-3P

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA33N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA33N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA33N10
MOSFET N-CH 100V 36A TO3P

MOSFET N-CH 100V 36A TO3P

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQA33N10-ND 001228-FQA33N10 598-FQA33N10 FQA33N10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA33N10 MOSFET N-CH 100V 36A TO-3P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3P TO-3P-3, SC-65-3
V(BR)DSS 100 volts
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