onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA30N40 FQA30N40

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039554-FQA30N40 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 290W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 140 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient Quantity per package: 450
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA30N40 - 1039554-FQA30N40 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQA30N40 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQA30N40-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 400V, 30A, To-3Pn; Channel Type Onsemi - 58K1514 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA30N40 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039554-FQA30N40 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 290W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 140 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA30N40 - 1039554-FQA30N40 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA30N40
1039554-FQA30N40
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA30N40 1039554-FQA30N40
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039554-FQA30N40 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 290W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 140 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039554-FQA30N40
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 290W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 4400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 140 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FQA30N40 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQA30N40
Single FETs, MOSFETs FQA30N40
MOSFET N-CH 400V 30A TO3PN

MOSFET N-CH 400V 30A TO3PN

Supplier's Site Datasheet
Single FETs, MOSFETs - FQA30N40-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA30N40-ND
Single FETs, MOSFETs FQA30N40-ND
N-Channel 400V 30A (Tc) 290W (Tc) Through Hole TO-3PN

N-Channel 400V 30A (Tc) 290W (Tc) Through Hole TO-3PN

Buy Now Datasheet
N Channel Mosfet, 400V, 30A, To-3Pn; Channel Type Onsemi - 58K1514 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 400V, 30A, To-3Pn; Channel Type Onsemi
58K1514
N Channel Mosfet, 400V, 30A, To-3Pn; Channel Type Onsemi 58K1514
N CHANNEL MOSFET, 400V, 30A, TO-3PN; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 400V, 30A, TO-3PN; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA30N40 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA30N40
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA30N40
MOSFET N-CH 400V 30A TO3PN

MOSFET N-CH 400V 30A TO3PN

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039554-FQA30N40 FQA30N40 FQA30N40-ND 58K1514 FQA30N40
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA30N40 Single FETs, MOSFETs Single FETs, MOSFETs N Channel Mosfet, 400V, 30A, To-3Pn; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 400 volts 400 volts
PD 290000 milliwatts 290000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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4 suppliers