onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N50F FQA28N50F

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 131607-FQA28N50F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 28.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 5600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 160 mOhm @ 14.2A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 131607-FQA28N50F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 28.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 5600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 160 mOhm @ 14.2A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N50F - 131607-FQA28N50F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N50F
131607-FQA28N50F
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N50F 131607-FQA28N50F
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 131607-FQA28N50F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 28.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 5600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 160 mOhm @ 14.2A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Application Field: Used in Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 131607-FQA28N50F
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 28.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 140nC @ 10V
Max Input Capacitance: 5600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 160 mOhm @ 14.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial

Buy Now Datasheet
Single FETs, MOSFETs - FQA28N50F-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA28N50F-ND
Single FETs, MOSFETs FQA28N50F-ND
N-Channel 500V 28.4A (Tc) 310W (Tc) Through Hole TO-3P

N-Channel 500V 28.4A (Tc) 310W (Tc) Through Hole TO-3P

Buy Now Datasheet
Singapore
N-Channel 500V 28.4A 310W MOSFET Transistor
278-FQA28N50F
N-Channel 500V 28.4A 310W MOSFET Transistor 278-FQA28N50F
500V 28.4A N-Channel MOSFET, 160mR Rds On, 310W PD Product overview: FQA28N50F from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 28.4A, 310W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 28.4A, 310W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA28N50F can be used for catalog matching and distributor lookup.

500V 28.4A N-Channel MOSFET, 160mR Rds On, 310W PD Product overview: FQA28N50F from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 28.4A, 310W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 28.4A, 310W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA28N50F can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA28N50F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA28N50F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA28N50F
MOSFET N-CH 500V 28.4A TO3P

MOSFET N-CH 500V 28.4A TO3P

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 131607-FQA28N50F FQA28N50F-ND 278-FQA28N50F FQA28N50F
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N50F Single FETs, MOSFETs N-Channel 500V 28.4A 310W MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts
PD 310000 milliwatts 310000 milliwatts
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