MOSFETs 500V N-Channel QFET Product overview: FQA28N50 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQA28N50 can be used for catalog matching and distributor lookup.
MOSFET N-CH 500V 28.4A TO3P
N-Channel 500V 28.4A (Tc) 310W (Tc) Through Hole TO-3P
Manufacturer: ON Semiconductor
Win Source Part Number: 1175162-FQA28N50
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: FQA28N50
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-3P-3, SC-65-3
Power Dissipation (Maximum): 310W
Alternative Parts (Cross-Reference): TSM23N50CN C0; TSM20N50CN C0; STW45NM50FD; STW20NM50FD;
Introduction Date: April 01, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 28.4A
Rds On (Maximum) at Id, Vgs: 160mOhm at 14.2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 5600pF at 25V
MOSFET N-CH 500V 28.4A TO3P
500V 28.4A 160mΩ@10V,14.2A 310W 5V@250uA N Channel TO-3P-3 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FQA28N50 | FQA28N50 | FQA28N50-ND | 1175162-FQA28N50 | FQA28N50 | FQA28N50 | FQA28N50 |
| Product Name | N-Channel 500V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Electronic Surplus - FQA28N50 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0280 kS | ||||||
| PD | 310 milliwatts | 310000 milliwatts | 310000 milliwatts | 310000 milliwatts | |||
| Package Type | Tube | TO-3; TO-3P-3, SC-65-3 | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3 | TO-3P-3, SC-65-3 | TO-3 |
