onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15 FQA28N15

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039551-FQA28N15 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 227W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 90 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Lighting, Audio, Motor Drive & Control Quantity per package: 450
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15 - 1039551-FQA28N15 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQA28N15-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA28N15 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 150V, 33A, To-3P; Channel Type Onsemi - 58K8866 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor, N Channel, 33 A, 150 V, 0.067 Ohm, 10 V, 4 V Rohs Compliant Onsemi - 87X8791 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039551-FQA28N15 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 227W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 90 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Lighting, Audio, Motor Drive & Control Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15 - 1039551-FQA28N15 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15
1039551-FQA28N15
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15 1039551-FQA28N15
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039551-FQA28N15 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 227W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 90 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Lighting, Audio, Motor Drive & Control Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039551-FQA28N15
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 227W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 90 mOhm @ 16.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Lighting, Audio, Motor Drive & Control
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FQA28N15-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA28N15-ND
Single FETs, MOSFETs FQA28N15-ND
N-Channel 150V 33A (Tc) 227W (Tc) Through Hole TO-3PN

N-Channel 150V 33A (Tc) 227W (Tc) Through Hole TO-3PN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA28N15 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA28N15
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA28N15
MOSFET N-CH 150V 33A TO3PN

MOSFET N-CH 150V 33A TO3PN

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQA28N15
MOSFET FQA28N15
MOSFET 150V N-Channel QFET

MOSFET 150V N-Channel QFET

Buy Now Datasheet
N Channel Mosfet, 150V, 33A, To-3P; Channel Type Onsemi - 58K8866 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 150V, 33A, To-3P; Channel Type Onsemi
58K8866
N Channel Mosfet, 150V, 33A, To-3P; Channel Type Onsemi 58K8866
N CHANNEL MOSFET, 150V, 33A, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 150V, 33A, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 33 A, 150 V, 0.067 Ohm, 10 V, 4 V Rohs Compliant Onsemi - 87X8791 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 33 A, 150 V, 0.067 Ohm, 10 V, 4 V Rohs Compliant Onsemi
87X8791
Mosfet Transistor, N Channel, 33 A, 150 V, 0.067 Ohm, 10 V, 4 V Rohs Compliant Onsemi 87X8791
MOSFET Transistor, N Channel, 33 A, 150 V, 0.067 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 33 A, 150 V, 0.067 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039551-FQA28N15 FQA28N15-ND FQA28N15 FQA28N15 58K8866 87X8791
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 150V, 33A, To-3P; Channel Type Onsemi Mosfet Transistor, N Channel, 33 A, 150 V, 0.067 Ohm, 10 V, 4 V Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 150 volts
PD 227000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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