onsemi Single FETs, MOSFETs FQA28N15

Description
N-Channel 150V 33A (Tc) 227W (Tc) Through Hole TO-3PN
  • Single FETs, MOSFETs - FQA28N15-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15 - 1039551-FQA28N15 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA28N15 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 150V, 33A, To-3P; Channel Type Onsemi - 58K8866 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor, N Channel, 33 A, 150 V, 0.067 Ohm, 10 V, 4 V Rohs Compliant Onsemi - 87X8791 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 150V 33A (Tc) 227W (Tc) Through Hole TO-3PN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQA28N15-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA28N15-ND
Single FETs, MOSFETs FQA28N15-ND
N-Channel 150V 33A (Tc) 227W (Tc) Through Hole TO-3PN

N-Channel 150V 33A (Tc) 227W (Tc) Through Hole TO-3PN

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15 - 1039551-FQA28N15 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15
1039551-FQA28N15
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15 1039551-FQA28N15
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039551-FQA28N15 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 227W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 90 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Lighting, Audio, Motor Drive & Control Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039551-FQA28N15
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 227W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 90 mOhm @ 16.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Lighting, Audio, Motor Drive & Control
Quantity per package: 450

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA28N15 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA28N15
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA28N15
MOSFET N-CH 150V 33A TO3PN

MOSFET N-CH 150V 33A TO3PN

Supplier's Site
N Channel Mosfet, 150V, 33A, To-3P; Channel Type Onsemi - 58K8866 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 150V, 33A, To-3P; Channel Type Onsemi
58K8866
N Channel Mosfet, 150V, 33A, To-3P; Channel Type Onsemi 58K8866
N CHANNEL MOSFET, 150V, 33A, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 150V, 33A, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 33 A, 150 V, 0.067 Ohm, 10 V, 4 V Rohs Compliant Onsemi - 87X8791 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 33 A, 150 V, 0.067 Ohm, 10 V, 4 V Rohs Compliant Onsemi
87X8791
Mosfet Transistor, N Channel, 33 A, 150 V, 0.067 Ohm, 10 V, 4 V Rohs Compliant Onsemi 87X8791
MOSFET Transistor, N Channel, 33 A, 150 V, 0.067 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 33 A, 150 V, 0.067 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQA28N15
MOSFET FQA28N15
MOSFET 150V N-Channel QFET

MOSFET 150V N-Channel QFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQA28N15-ND 1039551-FQA28N15 FQA28N15 58K8866 87X8791 FQA28N15
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15 Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 150V, 33A, To-3P; Channel Type Onsemi Mosfet Transistor, N Channel, 33 A, 150 V, 0.067 Ohm, 10 V, 4 V Rohs Compliant Onsemi MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3PN TO-3P-3, SC-65-3 TO-3 TO-3
V(BR)DSS 150 volts
PD 227000 milliwatts
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