onsemi 150V 33A MOSFET Transistor FQA28N15_F109

Description
MOSFET N-CH 150V 33A TO-3P Product overview: FQA28N15_F109 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA28N15_F109 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 150V 33A TO-3P Product overview: FQA28N15_F109 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA28N15_F109 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
150V 33A MOSFET Transistor
278-FQA28N15_F109
150V 33A MOSFET Transistor 278-FQA28N15_F109
MOSFET N-CH 150V 33A TO-3P Product overview: FQA28N15_F109 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA28N15_F109 can be used for catalog matching and distributor lookup.

MOSFET N-CH 150V 33A TO-3P Product overview: FQA28N15_F109 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA28N15_F109 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15_F109 - 1039552-FQA28N15_F109 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15_F109
1039552-FQA28N15_F109
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15_F109 1039552-FQA28N15_F109
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039552-FQA28N15_F10 9 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 227W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 90 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039552-FQA28N15_F109
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 227W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 90 mOhm @ 16.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA28N15_F109 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA28N15_F109
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA28N15_F109
MOSFET N-CH 150V 33A TO3PN

MOSFET N-CH 150V 33A TO3PN

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-FQA28N15_F109 1039552-FQA28N15_F109 FQA28N15_F109
Product Name 150V 33A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA28N15_F109 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
PD 227000 milliwatts 227000 milliwatts
TJ -55 C (-67 F) -55 to 175 C (-67 to 347 F)
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