onsemi Single FETs, MOSFETs FQA19N60

Description
N-Channel 600V 18.5A (Tc) 300W (Tc) Through Hole TO-3PN
Request a Quote Datasheet
Description
N-Channel 600V 18.5A (Tc) 300W (Tc) Through Hole TO-3PN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 488-FQA19N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-FQA19N60-ND
Single FETs, MOSFETs 488-FQA19N60-ND
N-Channel 600V 18.5A (Tc) 300W (Tc) Through Hole TO-3PN

N-Channel 600V 18.5A (Tc) 300W (Tc) Through Hole TO-3PN

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N60 - 204262-FQA19N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N60
204262-FQA19N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N60 204262-FQA19N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204262-FQA19N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 18.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 90nC @ 10V Max Input Capacitance: 3600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 9.3A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204262-FQA19N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 18.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 3600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 9.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FQA19N60 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQA19N60
Single FETs, MOSFETs FQA19N60
MOSFET N-CH 600V 18.5A TO3PN

MOSFET N-CH 600V 18.5A TO3PN

Supplier's Site Datasheet
Mosfet, N, To-3P; Channel Type Onsemi - 23M6297 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-3P; Channel Type Onsemi
23M6297
Mosfet, N, To-3P; Channel Type Onsemi 23M6297
MOSFET, N, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:300W RoHS Compliant: Yes

MOSFET, N, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:300W RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQA19N60
MOSFET FQA19N60
MOSFET 600V N-CH QFET

MOSFET 600V N-CH QFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA19N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA19N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA19N60
MOSFET N-CH 600V 18.5A TO3PN

MOSFET N-CH 600V 18.5A TO3PN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 488-FQA19N60-ND 204262-FQA19N60 FQA19N60 23M6297 FQA19N60 FQA19N60
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N60 Single FETs, MOSFETs Mosfet, N, To-3P; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3PN TO-3; TO-3P-3, SC-65-3 TO-3 TO-3P-3, SC-65-3
V(BR)DSS 600 volts 600 volts
PD 300000 milliwatts 300000 milliwatts 300000 milliwatts
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