onsemi Single FETs, MOSFETs FQA19N60

Description
N-Channel 600V 18.5A (Tc) 300W (Tc) Through Hole TO-3PN
  • Single FETs, MOSFETs - 488-FQA19N60-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQA19N60 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N60 - 204262-FQA19N60 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA19N60 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N, To-3P; Channel Type Onsemi - 23M6297 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 600V 18.5A (Tc) 300W (Tc) Through Hole TO-3PN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 488-FQA19N60-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-FQA19N60-ND
Single FETs, MOSFETs 488-FQA19N60-ND
N-Channel 600V 18.5A (Tc) 300W (Tc) Through Hole TO-3PN

N-Channel 600V 18.5A (Tc) 300W (Tc) Through Hole TO-3PN

Buy Now Datasheet
Single FETs, MOSFETs - FQA19N60 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQA19N60
Single FETs, MOSFETs FQA19N60
MOSFET N-CH 600V 18.5A TO3PN

MOSFET N-CH 600V 18.5A TO3PN

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N60 - 204262-FQA19N60 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N60
204262-FQA19N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N60 204262-FQA19N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204262-FQA19N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 18.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 90nC @ 10V Max Input Capacitance: 3600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 9.3A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204262-FQA19N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 18.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 3600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 9.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQA19N60
MOSFET FQA19N60
MOSFET 600V N-CH QFET

MOSFET 600V N-CH QFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA19N60 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA19N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA19N60
MOSFET N-CH 600V 18.5A TO3PN

MOSFET N-CH 600V 18.5A TO3PN

Supplier's Site
Mosfet, N, To-3P; Channel Type Onsemi - 23M6297 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-3P; Channel Type Onsemi
23M6297
Mosfet, N, To-3P; Channel Type Onsemi 23M6297
MOSFET, N, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:300W RoHS Compliant: Yes

MOSFET, N, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:300W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 488-FQA19N60-ND FQA19N60 204262-FQA19N60 FQA19N60 FQA19N60 23M6297
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N60 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N, To-3P; Channel Type Onsemi
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3PN TO-3P-3, SC-65-3 TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
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