MOSFET N-CH 600V 18.5A TO3PN
600V N-Channel Power MOSFET, 18.5A, 380mR, TO-3P Product overview: FQA19N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 18.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 18.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA19N60 can be used for catalog matching and distributor lookup.
N-Channel 600V 18.5A (Tc) 300W (Tc) Through Hole TO-3PN
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204262-FQA19N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 18.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 3600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 9.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Quantity per package: 450
MOSFET, N, TO-3P; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:300W RoHS Compliant: Yes
MOSFET N-CH 600V 18.5A TO3PN
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQA19N60 | 278-FQA19N60 | 488-FQA19N60-ND | 204262-FQA19N60 | FQA19N60 | 23M6297 | FQA19N60 |
| Product Name | Single FETs, MOSFETs | N-Channel 600V 18.5A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N60 | MOSFET | Mosfet, N, To-3P; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| IDSS | 18500 milliamps | 18500 milliamps |
