onsemi Single FETs, MOSFETs FQA19N20L

Description
N-Channel 200V 25A (Tc) 190W (Tc) Through Hole TO-3P
Request a Quote Datasheet
Description
N-Channel 200V 25A (Tc) 190W (Tc) Through Hole TO-3P
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - FQA19N20L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA19N20L-ND
Single FETs, MOSFETs FQA19N20L-ND
N-Channel 200V 25A (Tc) 190W (Tc) Through Hole TO-3P

N-Channel 200V 25A (Tc) 190W (Tc) Through Hole TO-3P

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N20L - 204261-FQA19N20L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N20L
204261-FQA19N20L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N20L 204261-FQA19N20L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204261-FQA19N20L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 35nC @ 5V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 140 mOhm @ 12.5A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204261-FQA19N20L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 35nC @ 5V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 140 mOhm @ 12.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA19N20L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA19N20L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA19N20L
MOSFET N-CH 200V 25A TO3P

MOSFET N-CH 200V 25A TO3P

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQA19N20L-ND 204261-FQA19N20L FQA19N20L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA19N20L Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3P TO-3P-3, SC-65-3
V(BR)DSS 200 volts
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