onsemi Single FETs, MOSFETs FQA140N10

Description
MOSFET N-CH 100V 140A TO3PN
Request a Quote Datasheet
Description
MOSFET N-CH 100V 140A TO3PN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQA140N10 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQA140N10
Single FETs, MOSFETs FQA140N10
MOSFET N-CH 100V 140A TO3PN

MOSFET N-CH 100V 140A TO3PN

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA140N10 - 040325-FQA140N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA140N10
040325-FQA140N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA140N10 040325-FQA140N10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040325-FQA140N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 375W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 140A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 285nC @ 10V Max Input Capacitance: 7900pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 10 mOhm @ 70A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040325-FQA140N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 375W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 140A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 285nC @ 10V
Max Input Capacitance: 7900pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 10 mOhm @ 70A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FQA140N10OS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA140N10OS-ND
Single FETs, MOSFETs FQA140N10OS-ND
N-Channel 100V 140A (Tc) 375W (Tc) Through Hole TO-3PN

N-Channel 100V 140A (Tc) 375W (Tc) Through Hole TO-3PN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA140N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA140N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA140N10
MOSFET N-CH 100V 140A TO3PN

MOSFET N-CH 100V 140A TO3PN

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number FQA140N10 040325-FQA140N10 FQA140N10OS-ND FQA140N10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA140N10 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts
IDSS 140000 milliamps
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