onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA13N80_F109 FQA13N80_F109

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 144703-FQA13N80_F109
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 12.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 88nC @ 10V
Max Input Capacitance: 3500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 6.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

MOSFET N-CH 800V 12.6A TO-3P Product overview: FQA13N80_F109 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 12.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 12.6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQA13N80_F109 can be used for catalog matching and distributor lookup.