onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA12P20 FQA12P20

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039537-FQA12P20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 12.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 470 mOhm @ 6.3A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039537-FQA12P20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 12.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 470 mOhm @ 6.3A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA12P20 - 1039537-FQA12P20 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA12P20
1039537-FQA12P20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA12P20 1039537-FQA12P20
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039537-FQA12P20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 12.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 470 mOhm @ 6.3A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039537-FQA12P20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 12.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 470 mOhm @ 6.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - FQA12P20-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA12P20-ND
Single FETs, MOSFETs FQA12P20-ND
P-Channel 200V 12.6A (Tc) 150W (Tc) Through Hole TO-3P

P-Channel 200V 12.6A (Tc) 150W (Tc) Through Hole TO-3P

Buy Now Datasheet
Single FETs, MOSFETs - FQA12P20 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQA12P20
Single FETs, MOSFETs FQA12P20
MOSFET P-CH 200V 12.6A TO3P

MOSFET P-CH 200V 12.6A TO3P

Supplier's Site
Singapore
200V 12.6A MOSFET Transistor
278-FQA12P20
200V 12.6A MOSFET Transistor 278-FQA12P20
MOSFET P-CH 200V 12.6A TO-3P Product overview: FQA12P20 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 12.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 12.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA12P20 can be used for catalog matching and distributor lookup.

MOSFET P-CH 200V 12.6A TO-3P Product overview: FQA12P20 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 12.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 12.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA12P20 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA12P20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA12P20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA12P20
MOSFET P-CH 200V 12.6A TO3P

MOSFET P-CH 200V 12.6A TO3P

Supplier's Site
Mosfet; Channel Type Onsemi - 58K8864 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet; Channel Type Onsemi
58K8864
Mosfet; Channel Type Onsemi 58K8864
MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:12.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:150W; MSL:- RoHS Compliant: Yes

MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:12.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:150W; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039537-FQA12P20 FQA12P20-ND FQA12P20 278-FQA12P20 FQA12P20 58K8864
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA12P20 Single FETs, MOSFETs Single FETs, MOSFETs 200V 12.6A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet; Channel Type Onsemi
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 200 volts 200 volts
PD 150000 milliwatts 150000 milliwatts 150000 milliwatts 150000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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