P-Channel 200V 12.6A (Tc) 150W (Tc) Through Hole TO-3P
MOSFET P-CH 200V 12.6A TO-3P Product overview: FQA12P20 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 12.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 12.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA12P20 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039537-FQA12P20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 12.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 470 mOhm @ 6.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:12.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:150W; MSL:- RoHS Compliant: Yes
MOSFET P-CH 200V 12.6A TO3P
MOSFET P-CH 200V 12.6A TO3P
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQA12P20-ND | 278-FQA12P20 | 1039537-FQA12P20 | 58K8864 | FQA12P20 | FQA12P20 |
| Product Name | Single FETs, MOSFETs | 200V 12.6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA12P20 | Mosfet; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | ||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3PN | TO-3 | TO-3P-3, SC-65-3 | TO-3; TO-3P-3, SC-65-3 | |
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
