onsemi Single FETs, MOSFETs FQA11N90

Description
N-Channel 900V 11.4A (Tc) 300W (Tc) Through Hole TO-3P
Request a Quote Datasheet
Description
N-Channel 900V 11.4A (Tc) 300W (Tc) Through Hole TO-3P
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQA11N90-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA11N90-ND
Single FETs, MOSFETs FQA11N90-ND
N-Channel 900V 11.4A (Tc) 300W (Tc) Through Hole TO-3P

N-Channel 900V 11.4A (Tc) 300W (Tc) Through Hole TO-3P

Buy Now Datasheet
Electronic Surplus - FQA11N90 - 1175150-FQA11N90 - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - FQA11N90
1175150-FQA11N90
Electronic Surplus - FQA11N90 1175150-FQA11N90
Manufacturer: ON Semiconductor Win Source Part Number: 1175150-FQA11N90 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P-3, SC-65-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 900V Id - Continuous Drain Current: 11.4A Rds On (Maximum) at Id, Vgs: 960mOhm at 5.7A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 94nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 3500pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175150-FQA11N90
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-3P-3, SC-65-3
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 900V
Id - Continuous Drain Current: 11.4A
Rds On (Maximum) at Id, Vgs: 960mOhm at 5.7A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 94nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 3500pF at 25V

Buy Now
Singapore, Singapore
900V 11.4A MOSFET Transistor
278-FQA11N90
900V 11.4A MOSFET Transistor 278-FQA11N90
MOSFET N-CH 900V 11.4A TO-3P Product overview: FQA11N90 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 11.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 11.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA11N90 can be used for catalog matching and distributor lookup.

MOSFET N-CH 900V 11.4A TO-3P Product overview: FQA11N90 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 11.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 11.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA11N90 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA11N90 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA11N90
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA11N90
MOSFET N-CH 900V 11.4A TO3P

MOSFET N-CH 900V 11.4A TO3P

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQA11N90-ND 1175150-FQA11N90 278-FQA11N90 FQA11N90
Product Name Single FETs, MOSFETs Electronic Surplus - FQA11N90 900V 11.4A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3 TO-3P-3, SC-65-3
V(BR)DSS 900 volts
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