onsemi 900V 11.4A MOSFET Transistor FQA11N90

MOSFET N-CH 900V 11.4A TO-3P Product overview: FQA11N90 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 11.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 11.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA11N90 can be used for catalog matching and distributor lookup.

N-Channel 900V 11.4A (Tc) 300W (Tc) Through Hole TO-3P

Manufacturer: ON Semiconductor
Win Source Part Number: 1175150-FQA11N90
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-3P-3, SC-65-3
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 900V
Id - Continuous Drain Current: 11.4A
Rds On (Maximum) at Id, Vgs: 960mOhm at 5.7A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 94nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 3500pF at 25V