Manufacturer: ON Semiconductor
Win Source Part Number: 1175148-FQA10N80C
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: FQA10N80C
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-3P-3, SC-65-3
Power Dissipation (Maximum): 240W
Alternative Parts (Cross-Reference): IXFQ10N80P; 2SK2606; BUZ305;
Introduction Date: September 10, 2006
ECCN: EAR99
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 10A
Rds On (Maximum) at Id, Vgs: 1.1Ohm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 58nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 2800pF at 25V
N-Channel 800V 10A (Tc) 240W (Tc) Through Hole TO-3P
MOSFET 800V N-CH QFET ADVANCE TO-3PN-3. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 800V 10A TO3P
| Win Source Electronics | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors |
| Product Number | 1175148-FQA10N80C | FQA10N80C-ND | 99752478 | FQA10N80C |
| Product Name | FETs - Single - FQA10N80C | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 800 volts | |||
| PD | 240000 milliwatts |
