N-Channel 800V 10A (Tc) 240W (Tc) Through Hole TO-3P
MOSFET N-CH 800V 10A TO3P Product overview: FQA10N80C-F109 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA10N80C-F109 can be used for catalog matching and distributor lookup.
MOSFET N-CH 800V 10A TO3P
MOSFET N-CH 800V 10A TO3P
MOSFET, N-CH, 800V, 10A, TO-3PN -3; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQA10N80C-F109-ND | 278-FQA10N80C-F109 | FQA10N80C-F109 | FQA10N80C-F109 | FQA10N80C-F109 | 31Y1501 |
| Product Name | Single FETs, MOSFETs | 800V 10A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 800V, 10A, To-3Pn -3; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-3; TO-3P-3, SC-65-3 | Tube | TO-3; TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3 | |
| PD | 240000 milliwatts | 240000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
