onsemi Single FETs, MOSFETs FQA10N80

Description
N-Channel 800V 9.8A (Tc) 240W (Tc) Through Hole TO-3P
Request a Quote Datasheet
Description
N-Channel 800V 9.8A (Tc) 240W (Tc) Through Hole TO-3P
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - FQA10N80-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA10N80-ND
Single FETs, MOSFETs FQA10N80-ND
N-Channel 800V 9.8A (Tc) 240W (Tc) Through Hole TO-3P

N-Channel 800V 9.8A (Tc) 240W (Tc) Through Hole TO-3P

Buy Now Datasheet
FETs - Single - FQA10N80 - 1175147-FQA10N80 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQA10N80
1175147-FQA10N80
FETs - Single - FQA10N80 1175147-FQA10N80
Manufacturer: ON Semiconductor Win Source Part Number: 1175147-FQA10N80 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P-3, SC-65-3 Power Dissipation (Maximum): 240W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 800V Id - Continuous Drain Current: 9.8A Rds On (Maximum) at Id, Vgs: 1.05Ohm at 4.9A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 71nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 2700pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175147-FQA10N80
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-3P-3, SC-65-3
Power Dissipation (Maximum): 240W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 9.8A
Rds On (Maximum) at Id, Vgs: 1.05Ohm at 4.9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 71nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 2700pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA10N80 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA10N80
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA10N80
MOSFET N-CH 800V 9.8A TO3P

MOSFET N-CH 800V 9.8A TO3P

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQA10N80-ND 1175147-FQA10N80 FQA10N80
Product Name Single FETs, MOSFETs FETs - Single - FQA10N80 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3 TO-3P-3, SC-65-3
V(BR)DSS 800 volts
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