The FODM2705 is a 4-pin full-pitch mini-flat package phototransistor optocoupler featuring two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. It has a minimum current transfer ratio of 50% and a maximum of 300% at ±5 mA forward current and 5 V collector-emitter voltage. The device supports a peak working insulation voltage of 565 V, with 3,750 VAC RMS isolation for 1 minute per UL1577 and DIN-EN/IEC60747-5-5 standards. External creepage and clearance are both ≥5 mm, and the insulation thickness is ≥0.4 mm. The operating temperature range is -40°C to +110°C, and the junction temperature rating is 125°C. The maximum continuous collector current is 80 mA, and the collector-emitter voltage is 40 V. The package has a maximum standoff height of 2.4 mm and a lead pitch of 2.54 mm.
Transistor Output Optocouplers Phototrans Ouput MFP Input Product overview: FODM2705R1V from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-FODM2705R1V can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-FODM2705R1V |
| Product Name | Bipolar Transistor |
| IC(max) | 80 milliamps |
