The FODM2701 is a phototransistor optocoupler containing a gallium arsenide infrared emitting diode driving a phototransistor in a 4-pin full-pitch mini-flat package with a 2.54 mm lead pitch and maximum 2.4 mm standoff height. It supports an input-to-output isolation voltage of 3,750 VAC RMS for 1 minute per UL1577 and a peak working insulation voltage of 565 V per DIN-EN/IEC60747-5-5.
OPTOISO 3.75KV TRANSISTOR 4SMD / Optocoupler AC-IN 1-CH Transistor DC-OUT 4-Pin Mini-Flat T/R Product overview: FODM2701R2V from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.75KV. Search-friendly keywords include transistor, BJT, switching, amplification, 3.75KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-FODM2701R2V can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-FODM2701R2V |
| Product Name | 3.75KV Bipolar Transistor |
| Package Type | Reel package |
