The FODM2701 is a 4-pin full-pitch mini-flat package phototransistor optocoupler with a gallium arsenide infrared emitting diode driving a phototransistor. It has a maximum working insulation voltage of 565 V peak, 3,750 VAC RMS isolation for 1 minute, and creepage and clearance of at least 5 mm. The current transfer ratio ranges from 50% to 300% at 5 mA forward current and 5 V collector-emitter voltage. It operates from -40°C to +110°C, with a maximum junction temperature of 125°C. The device meets UL1577 and DIN-EN/IEC60747-5-5 safety standards. The FODM2701BR2V variant includes the DIN EN/IEC60747-5-5 option and tape-and-reel packaging, consistent with the series specifications.
OPTOISO 3.75KV TRANSISTOR 4SMD Product overview: FODM2701BR2V from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.75KV. Search-friendly keywords include transistor, BJT, switching, amplification, 3.75KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-FODM2701BR2V can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-FODM2701BR2V |
| Product Name | 3.75KV Bipolar Transistor |
| IC(max) | 80 milliamps |
