The FODM2701 is a 4-pin full-pitch mini-flat package phototransistor optocoupler with a gallium arsenide infrared LED driving a phototransistor, designed for digital logic and power supply monitoring applications. It features a minimum creepage and clearance of 5 mm, a maximum working insulation voltage of 565 V peak, and an isolation test voltage of 3,750 VAC RMS for 1 minute. The device supports a continuous forward current of 50 mA, a collector current of 80 mA, and a junction temperature up to 125°C. It meets UL1577 and DIN-EN/IEC60747-5-5 safety standards. The current transfer ratio ranges from 50% to 300% at 5 mA forward current and 5 V collector-emitter voltage. The package has a maximum standoff height of 2.4 mm and a lead pitch of 2.54 mm. The FODM2701BR1V variant is not explicitly listed, but the series shares identical package, safety ratings, and key electrical characteristics.
OPTOISO 3.75KV TRANSISTOR 4SMD Product overview: FODM2701BR1V from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.75KV. Search-friendly keywords include transistor, BJT, switching, amplification, 3.75KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-FODM2701BR1V can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-FODM2701BR1V |
| Product Name | 3.75KV Bipolar Transistor |
| IC(max) | 80 milliamps |
