The FOD819 is a 4-pin DIP high-speed phototransistor optocoupler for isolated data signal transmission, featuring a GaAs infrared LED and a photo detector with integrated base-to-emitter resistor. It has an 80 V collector-emitter voltage, a current transfer ratio of 100% to 600%, and propagation delay times of 9-30 μs (high-to-low) and 18-30 μs (low-to-high) with a 10 kΩ load. Operating temperature ranges from -55°C to +110°C, with a junction temperature limit of 125°C. It meets UL1577 (5,000 VAC RMS isolation for 1 minute) and DIN EN/IEC60747-5-5 (850 V peak working insulation voltage). External creepage and clearance are both ≥7 mm, with a through-insulation thickness of ≥0.4 mm. Total power dissipation is 200 mW.
Phototransistor Optocouplers, High Speed, 4-Pin DIP, MDIP 4L, 2000-TUBE Product overview: FOD819 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-FOD819 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-FOD819 |
| Product Name | DIP Bipolar Transistor |
| PD | 0.1500 milliwatts |
