onsemi Bipolar Transistor Arrays FMBA14

Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1.2A 1.25MHz 700mW Surface Mount SuperSOT™-6
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Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1.2A 1.25MHz 700mW Surface Mount SuperSOT™-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - FMBA14TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
FMBA14TR-ND
Bipolar Transistor Arrays FMBA14TR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1.2A 1.25MHz 700mW Surface Mount SuperSOT™-6

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1.2A 1.25MHz 700mW Surface Mount SuperSOT™-6

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - FMBA14 - 016312-FMBA14 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FMBA14
016312-FMBA14
TRANSISTORS - Transistors (BJT) - Single - FMBA14 016312-FMBA14
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016312-FMBA14 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 1.25MHz Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Maximum Current Collector: 1.2A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 1.5V @ 100μA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 20000 @ 100mA, 5V Maximum Power Dissipation: 700mW Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016312-FMBA14
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 1.25MHz
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Current Collector: 1.2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 1.5V @ 100μA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 20000 @ 100mA, 5V
Maximum Power Dissipation: 700mW
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FMBA14 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FMBA14
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FMBA14
TRANS 2NPN 30V 1.2A SUPERSOT-6

TRANS 2NPN 30V 1.2A SUPERSOT-6

Supplier's Site
Sheung Wan, Hong Kong
Darlington Transistors
FMBA14
Darlington Transistors FMBA14
Darlington Transistors NPN Multi-ChipTrans Darlington

Darlington Transistors NPN Multi-ChipTrans Darlington

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Darlington Transistors
Product Number FMBA14TR-ND 016312-FMBA14 FMBA14 FMBA14
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Single - FMBA14 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Darlington Transistors
Polarity NPN NPN; NPN - Darlington
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