onsemi TRANSISTORS - Transistors (BJT) - Arrays - FMB5551 FMB5551

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039121-FMB5551 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SuperSOT-6 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 700mW Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039121-FMB5551 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SuperSOT-6 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 700mW Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - FMB5551 - 1039121-FMB5551 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - FMB5551
1039121-FMB5551
TRANSISTORS - Transistors (BJT) - Arrays - FMB5551 1039121-FMB5551
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039121-FMB5551 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SuperSOT-6 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 700mW Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039121-FMB5551
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: 2 NPN (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 700mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Bipolar Transistor Arrays - FMB5551 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
FMB5551
Bipolar Transistor Arrays FMB5551
SMALL SIGNAL BIPOLAR TRANSISTOR,

SMALL SIGNAL BIPOLAR TRANSISTOR,

Supplier's Site Datasheet
Bipolar Transistor Arrays - FMB5551 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
FMB5551
Bipolar Transistor Arrays FMB5551
TRANS 2NPN 160V 0.6A SUPERSOT-6

TRANS 2NPN 160V 0.6A SUPERSOT-6

Supplier's Site Datasheet
Bipolar Transistor Arrays - FMB5551DKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
FMB5551DKR-ND
Bipolar Transistor Arrays FMB5551DKR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 600mA 300MHz 700mW Surface Mount SuperSOT™-6

Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 600mA 300MHz 700mW Surface Mount SuperSOT™-6

Buy Now Datasheet
Bipolar Transistor Arrays - FMB5551CT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
FMB5551CT-ND
Bipolar Transistor Arrays FMB5551CT-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 600mA 300MHz 700mW Surface Mount SuperSOT™-6

Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 600mA 300MHz 700mW Surface Mount SuperSOT™-6

Buy Now Datasheet
Bipolar Transistor Arrays - FMB5551TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
FMB5551TR-ND
Bipolar Transistor Arrays FMB5551TR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 600mA 300MHz 700mW Surface Mount SuperSOT™-6

Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 600mA 300MHz 700mW Surface Mount SuperSOT™-6

Buy Now Datasheet
Singapore
Bipolar Transistor
2087-FMB5551
Bipolar Transistor 2087-FMB5551
Bipolar Transistors - BJT NPN Transistor General Purpose Product overview: FMB5551 from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-FMB5551 can be used for catalog matching and distributor lookup.

Bipolar Transistors - BJT NPN Transistor General Purpose Product overview: FMB5551 from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-FMB5551 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FMB5551 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FMB5551
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FMB5551
TRANS 2NPN 160V 0.6A SUPERSOT-6

TRANS 2NPN 160V 0.6A SUPERSOT-6

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
FMB5551
Bipolar Transistors - BJT FMB5551
Bipolar Transistors - BJT NPN Transistor General Purpose

Bipolar Transistors - BJT NPN Transistor General Purpose

Buy Now Datasheet
Trans, Dual Npn, 160V, 0.6A, 150Deg C; Transistor Polarity Onsemi - 07AH3964 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Dual Npn, 160V, 0.6A, 150Deg C; Transistor Polarity Onsemi
07AH3964
Trans, Dual Npn, 160V, 0.6A, 150Deg C; Transistor Polarity Onsemi 07AH3964
TRANS, DUAL NPN, 160V, 0.6A, 150DEG C; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:160V; Power Dissipation Pd:700mW; DC Collector Current:600mA; DC Current Gain hFE:30hFE; Transistor Case Style:SuperSOT; No. of RoHS Compliant: Yes

TRANS, DUAL NPN, 160V, 0.6A, 150DEG C; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:160V; Power Dissipation Pd:700mW; DC Collector Current:600mA; DC Current Gain hFE:30hFE; Transistor Case Style:SuperSOT; No. of RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 1039121-FMB5551 FMB5551 FMB5551DKR-ND 2087-FMB5551 FMB5551 FMB5551 07AH3964
Product Name TRANSISTORS - Transistors (BJT) - Arrays - FMB5551 Bipolar Transistor Arrays Bipolar Transistor Arrays Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT Trans, Dual Npn, 160V, 0.6A, 150Deg C; Transistor Polarity Onsemi
Polarity NPN; 2 NPN (Dual) 2 NPN (Dual); NPN NPN NPN NPN
Package Type SOT3; SuperSOT-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 Reel TO-3
IC(max) 600 milliamps 100 milliamps 600 milliamps
VCEO 160 volts 160 volts
Operating Frequency 300 MHz
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