SMALL SIGNAL BIPOLAR TRANSISTOR,
TRANS 2NPN 160V 0.6A SUPERSOT-6
Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 600mA 300MHz 700mW Surface Mount SuperSOT™-6
Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 600mA 300MHz 700mW Surface Mount SuperSOT™-6
Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 600mA 300MHz 700mW Surface Mount SuperSOT™-6
Bipolar Transistors - BJT NPN Transistor General Purpose Product overview: FMB5551 from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-FMB5551 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039121-FMB5551
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: 2 NPN (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 700mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
TRANS, DUAL NPN, 160V, 0.6A, 150DEG C; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:160V; Power Dissipation Pd:700mW; DC Collector Current:600mA; DC Current Gain hFE:30hFE; Transistor Case Style:SuperSOT; No. of RoHS Compliant: Yes
Bipolar Transistors - BJT NPN Transistor General Purpose
TRANS 2NPN 160V 0.6A SUPERSOT-6
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | FMB5551 | FMB5551DKR-ND | 2087-FMB5551 | 1039121-FMB5551 | 07AH3964 | FMB5551 | FMB5551 |
| Product Name | Bipolar Transistor Arrays | Bipolar Transistor Arrays | Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays - FMB5551 | Trans, Dual Npn, 160V, 0.6A, 150Deg C; Transistor Polarity Onsemi | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | 2 NPN (Dual); NPN | NPN | NPN | NPN; 2 NPN (Dual) | NPN | ||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | Reel | SOT3; SuperSOT-6 | TO-3 | ||
| IC(max) | 600 milliamps | 100 milliamps | 600 milliamps | ||||
| VCEO | 160 volts | 160 volts | |||||
| Operating Frequency | 300 MHz |
