onsemi Memory FM93C66LVMT8

Description
EEPROM, 256X16, Serial, CMOS, PDSO8
Request a Quote
Description
EEPROM, 256X16, Serial, CMOS, PDSO8
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The FM93C66LVMT8 is a 4096-bit CMOS non-volatile EEPROM organized as a 256 x 16-bit array, featuring a MICROWIRE interface that is compatible with various microcontrollers and microprocessors. It supports seven instructions for Read, Write, Erase, and Write Enable/Disable operations. The device operates within a voltage range of 2.7V to 5.5V and has a typical active current of 200µA, with standby currents as low as 0.1µA for the LZ version, making it suitable for low-power applications. The FM93C66LVMT8 is designed for high reliability and endurance, with a data retention period of up to 40 years and an endurance of 1,000,000 data changes. It is available in multiple package types, including 8-pin SO and 8-pin TSSOP, catering to space-constrained designs. The device does not require an erase instruction before writing, and it features self-timed write cycles, enhancing its usability in various applications.

Datasheet Summary
Powered by GS/AI

The FM93C66LVMT8 is a 4096-bit CMOS non-volatile EEPROM organized as a 256 x 16-bit array, featuring a MICROWIRE interface that is compatible with various microcontrollers and microprocessors. It supports seven instructions for Read, Write, Erase, and Write Enable/Disable operations. The device operates within a voltage range of 2.7V to 5.5V and has a typical active current of 200µA, with standby currents as low as 0.1µA for the LZ version, making it suitable for low-power applications. The FM93C66LVMT8 is designed for high reliability and endurance, with a data retention period of up to 40 years and an endurance of 1,000,000 data changes. It is available in multiple package types, including 8-pin SO and 8-pin TSSOP, catering to space-constrained designs. The device does not require an erase instruction before writing, and it features self-timed write cycles, enhancing its usability in various applications.

Suppliers

Company
Product
Description
Supplier Links
 - FM93C66LVMT8 - Rochester Electronics
Newburyport, MA, United States
EEPROM, 256X16, Serial, CMOS, PDSO8

EEPROM, 256X16, Serial, CMOS, PDSO8

Supplier's Site Datasheet
Memory - FM93C66LVMT8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 4Kbit Microwire 250 kHz 8-TSSOP

EEPROM Memory IC 4Kbit Microwire 250 kHz 8-TSSOP

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number FM93C66LVMT8 FM93C66LVMT8
Product Name Memory
Memory Category EEPROM EEPROM; EEPROM
Logic Family CMOS
Package Type SOP; SSOP; TSSOP; TSSOP8 SSOP; TSSOP; 8-TSSOP (0.173\", 4.40mm Width)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 4347194 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 2420772 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - AT34C02-10TI-2.7 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 2 kbits
View Details