onsemi Memory FM27C040V120

Description
EPROM - OTP Memory IC 4Mbit Parallel 120 ns 32-PLCC (14x11.46)
Datasheet
Description
EPROM - OTP Memory IC 4Mbit Parallel 120 ns 32-PLCC (14x11.46)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - FM27C040V120 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - OTP Memory IC 4Mbit Parallel 120 ns 32-PLCC (14x11.46)

EPROM - OTP Memory IC 4Mbit Parallel 120 ns 32-PLCC (14x11.46)

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number FM27C040V120
Product Name Memory
Memory Category EPROM; EPROM
Access Time 120 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 28431985 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Memory - 5962-9459901MYA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category NVSRAM; SRAM Chip
Access Time 55 ns
Density 64 kbits
View Details
DIP Memory IC and Storage Component - 2020-NM27C010N200 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category EPROM; Non-Volatile
Access Time 200 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers
Flash Memory - 1882635 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details