onsemi TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3013R FJY3013R

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 098731-FJY3013R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-523F Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3013R - 098731-FJY3013R - Win Source Electronics
    Win Source Electronics
  • Single, Pre-Biased Bipolar Transistors - FJY3013RTR-ND - DigiKey
    DigiKey
  • TRANS PREBIAS NPN 200MW SOT523F - 598-FJY3013R - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJY3013R - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 098731-FJY3013R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-523F Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3013R - 098731-FJY3013R - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3013R
098731-FJY3013R
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3013R 098731-FJY3013R
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 098731-FJY3013R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-523F Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 098731-FJY3013R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-523F
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 56 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - FJY3013RTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
FJY3013RTR-ND
Single, Pre-Biased Bipolar Transistors FJY3013RTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SC-89-3

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SC-89-3

Buy Now Datasheet
TRANS PREBIAS NPN 200MW SOT523F - 598-FJY3013R - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
TRANS PREBIAS NPN 200MW SOT523F
598-FJY3013R
TRANS PREBIAS NPN 200MW SOT523F 598-FJY3013R
TRANS PREBIAS NPN 200MW SOT523F

TRANS PREBIAS NPN 200MW SOT523F

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJY3013R - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJY3013R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJY3013R
TRANS PREBIAS NPN 50V SC89-3

TRANS PREBIAS NPN 50V SC89-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Transistors Bipolar RF Transistors
Product Number 098731-FJY3013R FJY3013RTR-ND 598-FJY3013R FJY3013R
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3013R Single, Pre-Biased Bipolar Transistors TRANS PREBIAS NPN 200MW SOT523F Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN - Pre-Biased NPN NPN; NPN
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