onsemi TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3013R FJY3013R

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 098731-FJY3013R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-523F Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3013R - 098731-FJY3013R - Win Source Electronics
    Win Source Electronics
  • Single, Pre-Biased Bipolar Transistors - FJY3013RTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJY3013R - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • TRANS PREBIAS NPN 200MW SOT523F - 598-FJY3013R - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 098731-FJY3013R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-523F Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3013R - 098731-FJY3013R - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3013R
098731-FJY3013R
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3013R 098731-FJY3013R
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 098731-FJY3013R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-523F Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 098731-FJY3013R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-523F
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 56 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - FJY3013RTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
FJY3013RTR-ND
Single, Pre-Biased Bipolar Transistors FJY3013RTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SC-89-3

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SC-89-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJY3013R - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJY3013R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJY3013R
TRANS PREBIAS NPN 50V SC89-3

TRANS PREBIAS NPN 50V SC89-3

Supplier's Site
TRANS PREBIAS NPN 200MW SOT523F - 598-FJY3013R - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
TRANS PREBIAS NPN 200MW SOT523F
598-FJY3013R
TRANS PREBIAS NPN 200MW SOT523F 598-FJY3013R
TRANS PREBIAS NPN 200MW SOT523F

TRANS PREBIAS NPN 200MW SOT523F

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Transistors Bipolar RF Transistors Transistors
Product Number 098731-FJY3013R FJY3013RTR-ND FJY3013R 598-FJY3013R
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJY3013R Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS PREBIAS NPN 200MW SOT523F
Polarity NPN; NPN - Pre-Biased NPN NPN; NPN
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