onsemi TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV4108RMTF FJV4108RMTF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067255-FJV4108RMTF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV4108RMTF - 067255-FJV4108RMTF - Win Source Electronics
    Win Source Electronics
  • Single, Pre-Biased Bipolar Transistors - FJV4108RMTF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJV4108RMTF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067255-FJV4108RMTF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV4108RMTF - 067255-FJV4108RMTF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV4108RMTF
067255-FJV4108RMTF
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV4108RMTF 067255-FJV4108RMTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067255-FJV4108RMTF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067255-FJV4108RMTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 56 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - FJV4108RMTF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
FJV4108RMTF-ND
Single, Pre-Biased Bipolar Transistors FJV4108RMTF-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-23-3

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJV4108RMTF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJV4108RMTF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJV4108RMTF
TRANS PREBIAS PNP 50V SOT23-3

TRANS PREBIAS PNP 50V SOT23-3

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 067255-FJV4108RMTF FJV4108RMTF-ND FJV4108RMTF
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV4108RMTF Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP - Pre-Biased PNP
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