onsemi Single, Pre-Biased Bipolar Transistors FJV3112RMTF

Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 200mW Surface Mount SOT-23-3
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 200mW Surface Mount SOT-23-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - FJV3112RMTF-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
FJV3112RMTF-ND
Single, Pre-Biased Bipolar Transistors FJV3112RMTF-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 200mW Surface Mount SOT-23-3

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 200mW Surface Mount SOT-23-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3112RMTF - 204199-FJV3112RMTF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3112RMTF
204199-FJV3112RMTF
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3112RMTF 204199-FJV3112RMTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204199-FJV3112RMTF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 300mV @ 1mA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 1mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204199-FJV3112RMTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 300mV @ 1mA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 1mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJV3112RMTF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJV3112RMTF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJV3112RMTF
TRANS PREBIAS NPN 40V SOT23-3

TRANS PREBIAS NPN 40V SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number FJV3112RMTF-ND 204199-FJV3112RMTF FJV3112RMTF
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3112RMTF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Pre-Biased
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