onsemi TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3109R FJV3109R

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204197-FJV3109R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 300mV @ 1mA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 1mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204197-FJV3109R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 300mV @ 1mA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 1mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3109R - 204197-FJV3109R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3109R
204197-FJV3109R
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3109R 204197-FJV3109R
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204197-FJV3109R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 300mV @ 1mA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 1mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204197-FJV3109R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 300mV @ 1mA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 1mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
200MW SOT23 Bipolar Transistor
293-FJV3109R
200MW SOT23 Bipolar Transistor 293-FJV3109R
TRANS PREBIAS NPN 200MW SOT23-3 Product overview: FJV3109R from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, SOT23, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-FJV3109R can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 200MW SOT23-3 Product overview: FJV3109R from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, SOT23, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-FJV3109R can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Transistors Bipolar RF Transistors
Product Number 204197-FJV3109R 293-FJV3109R
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3109R 200MW SOT23 Bipolar Transistor
Polarity NPN; NPN - Pre-Biased NPN
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