onsemi Single, Pre-Biased Bipolar Transistors FJV3105RMTF

Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3
Request a Quote Datasheet

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Product
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Single, Pre-Biased Bipolar Transistors - FJV3105RMTFTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
FJV3105RMTFTR-ND
Single, Pre-Biased Bipolar Transistors FJV3105RMTFTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3105RMTF - 016279-FJV3105RMTF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3105RMTF
016279-FJV3105RMTF
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3105RMTF 016279-FJV3105RMTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016279-FJV3105RMTF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016279-FJV3105RMTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
FJV3105RMTF
Bipolar Transistors - Pre-Biased FJV3105RMTF
Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 10K

Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 10K

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJV3105RMTF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJV3105RMTF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJV3105RMTF
TRANS PREBIAS NPN 50V SOT23-3

TRANS PREBIAS NPN 50V SOT23-3

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number FJV3105RMTFTR-ND 016279-FJV3105RMTF FJV3105RMTF FJV3105RMTF
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3105RMTF Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Pre-Biased
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