onsemi TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3102RMTF FJV3102RMTF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016276-FJV3102RMTF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 200mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Automotive, Power Management Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016276-FJV3102RMTF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 200mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Automotive, Power Management Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3102RMTF - 016276-FJV3102RMTF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3102RMTF
016276-FJV3102RMTF
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3102RMTF 016276-FJV3102RMTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016276-FJV3102RMTF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 200mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Automotive, Power Management Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016276-FJV3102RMTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Automotive, Power Management
Quantity per package: 3k pcs

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - FJV3102RMTFTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
FJV3102RMTFTR-ND
Single, Pre-Biased Bipolar Transistors FJV3102RMTFTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJV3102RMTF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJV3102RMTF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJV3102RMTF
TRANS PREBIAS NPN 50V SOT23-3

TRANS PREBIAS NPN 50V SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 016276-FJV3102RMTF FJV3102RMTFTR-ND FJV3102RMTF
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJV3102RMTF Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN - Pre-Biased NPN
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