The FJPF13007 is a high voltage NPN power transistor designed for applications requiring fast switching capabilities. It has a collector-emitter voltage rating of 400V and can handle a maximum collector current of 8A, making it suitable for use in electronic ballasts and switching mode power supplies. The device features a maximum power dissipation of 40W and operates within a junction temperature range of -65¬8C to 150¬8C. It is compliant with RoHS standards and comes in a TO-220 Fullpack package. The transistor exhibits a DC current gain (hFE) classification ranging from 15 to 39, depending on the specific grade. Its electrical characteristics include a collector-emitter saturation voltage of up to 3V at maximum current, ensuring efficient operation in various applications.
Bipolar Transistors - BJT NPN Sil Transistor Product overview: FJPF13007H2TU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-FJPF13007H2TU can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067236-FJPF13007H2TU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 4MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220F
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 3V @ 2A, 8A
Typical Gain (hFE) (Min): 26 @ 2A, 5V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
Bipolar (BJT) Transistor NPN 400V 8A 4MHz 40W Through Hole TO-220F-3
Bipolar Transistors - BJT NPN Sil Transistor
TRANS, NPN, 400V, 8A, 150DEG C, 40W ROHS COMPLIANT: YES
TRANS NPN 400V 8A TO220F-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 2087-FJPF13007H2TU | 067236-FJPF13007H2TU | FJPF13007H2TU-ND | FJPF13007H2TU | 54AH8712 | FJPF13007H2TU |
| Product Name | Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - FJPF13007H2TU | Single Bipolar Transistors | Bipolar Transistors - BJT | Trans, Npn, 400V, 8A, 150Deg C, 40W Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN | NPN | NPN | ||
| Package Type | Tube | TO-220; SOT3; TO-220F | TO-220; TO-220-3 Full Pack | TO-3 | ||
| Packing Method | Tube | Tube; Tube | ||||
| IC(max) | 8000 milliamps | 8000 milliamps |
