onsemi Single Bipolar Transistors FJP5554TU

Description
Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-220-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - FJP5554TU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJP5554TU-ND
Single Bipolar Transistors FJP5554TU-ND
Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-220-3

Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - FJP5554TU - 774597-FJP5554TU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FJP5554TU
774597-FJP5554TU
TRANSISTORS - Transistors (BJT) - Single - FJP5554TU 774597-FJP5554TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774597-FJP5554TU Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Power - Max: 70W Transistor Type: NPN Family Name: FJP5554 Categories: Discrete Semiconductor Products Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 400V Vce Saturation (Maximum) @ Ib, Ic: 1.5V @ 1A, 3.5A Current - Collector Cutoff (Maximum): 250μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 20 @ 800mA, 3V Alternative Parts (Cross-Reference): BULB742C; BUL742C; BUJD203A; TSC128DCZ; Introduction Date: October 20, 2005 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774597-FJP5554TU
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3
Power - Max: 70W
Transistor Type: NPN
Family Name: FJP5554
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 400V
Vce Saturation (Maximum) @ Ib, Ic: 1.5V @ 1A, 3.5A
Current - Collector Cutoff (Maximum): 250μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 20 @ 800mA, 3V
Alternative Parts (Cross-Reference): BULB742C; BUL742C; BUJD203A; TSC128DCZ;
Introduction Date: October 20, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJP5554TU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJP5554TU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJP5554TU
TRANS NPN 400V 4A TO220-3

TRANS NPN 400V 4A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number FJP5554TU-ND 774597-FJP5554TU FJP5554TU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - FJP5554TU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-220; TO-220-3 TO-220; SOT3
Packing Method Tube; Tube Tube; Tube
IC(max) 0.2500 milliamps 4000 milliamps
Unlock Full Specs
to access all available technical data