onsemi TRANSISTORS - Transistors (BJT) - Single - FJP3307DTU FJP3307DTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067232-FJP3307DTU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 400V Max Vce (sat): 3V @ 2A, 8A Typical Gain (hFE) (Min): 5 @ 5A, 5V Maximum Power Dissipation: 80W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067232-FJP3307DTU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 400V Max Vce (sat): 3V @ 2A, 8A Typical Gain (hFE) (Min): 5 @ 5A, 5V Maximum Power Dissipation: 80W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - FJP3307DTU - 067232-FJP3307DTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FJP3307DTU
067232-FJP3307DTU
TRANSISTORS - Transistors (BJT) - Single - FJP3307DTU 067232-FJP3307DTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067232-FJP3307DTU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 400V Max Vce (sat): 3V @ 2A, 8A Typical Gain (hFE) (Min): 5 @ 5A, 5V Maximum Power Dissipation: 80W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067232-FJP3307DTU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 3V @ 2A, 8A
Typical Gain (hFE) (Min): 5 @ 5A, 5V
Maximum Power Dissipation: 80W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single Bipolar Transistors - FJP3307DTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJP3307DTU-ND
Single Bipolar Transistors FJP3307DTU-ND
Bipolar (BJT) Transistor NPN 400V 8A 80W Through Hole TO-220-3

Bipolar (BJT) Transistor NPN 400V 8A 80W Through Hole TO-220-3

Buy Now Datasheet
Bipolar Transistor 276-FJP3307DTU
High Voltage Fast Switching NPN Power Transistor, 1000-TUBE Product overview: FJP3307DTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-FJP3307DTU can be used for catalog matching and distributor lookup.

High Voltage Fast Switching NPN Power Transistor, 1000-TUBE Product overview: FJP3307DTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-FJP3307DTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJP3307DTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJP3307DTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJP3307DTU
TRANS NPN 400V 8A TO220-3

TRANS NPN 400V 8A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 067232-FJP3307DTU FJP3307DTU-ND 276-FJP3307DTU FJP3307DTU
Product Name TRANSISTORS - Transistors (BJT) - Single - FJP3307DTU Single Bipolar Transistors Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN NPN
Package Type TO-220; SOT3; TO-220-3 TO-220; TO-220-3
IC(max) 8000 milliamps 8000 milliamps
VCEO 400 volts 400 volts
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